Tunneling spectroscopy in the hopping regime

نویسندگان

  • B. Sandow
  • W. Schirmacher
چکیده

Charge transport across tunneling junctions of n-doped Ge has been investigated experimentally and theoretically. Using tunneling spectroscopy we were able to observe the density of states and the effect of the electron-electron interaction on the excitation spectrum of samples, in which hopping is the transport mechanism close to equilibrium. To analyze the data of the measurements we derive an expression for the tunneling current in the hopping regime. We use our expression for the tunneling current in order to analyze the character of the transitions. Doing so, we show that in the experiment only transitions with at most small energy transfer were relevant.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Evidence for electrical spin tunnel injection into silicon

Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transp...

متن کامل

Donor-bridge-acceptor energetics determine the distance dependence of electron tunneling in DNA.

Electron transfer (ET) processes in DNA are of current interest because of their involvement in oxidative strand cleavage reactions and their relevance to the development of molecular electronics. Two mechanisms have been identified for ET in DNA, a single-step tunneling process and a multistep charge-hopping process. The dynamics of tunneling reactions depend on both the distance between the e...

متن کامل

Adsorbed states and scanning tunneling microscopy

The authors have studied adsorption of acetylene on Cu͑110͒ by means of low-temperature scanning tunneling microscopy. Adsorbed molecules preferentially aggregate at 40 K to yield dimer, trimer, and larger islands on the surface. Isolated species ͑monomer͒ adsorbs on the fourfold hollow site with ϳsp 3 rehybridization as characterized by inelastic electron tunneling spectroscopy. Tunneling electron...

متن کامل

ترابرد الکترونی یک نانو ساختار نردبانی در حضور نقص‌های شبکه‌ای

 The present research studied the electronic transport of an ideal infinite ladder nanostructure in the presence/absence of network defects by using Green’s function method at the tight-binding approximation. The network defects can be simulated by considering a finite ladder which is connected via two contacts to two similar infinite ladders. The results showed that the hopping energy of rungs...

متن کامل

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2003